OBELIX will demonstrate the successful implementation of orbital currents in original devices relevant to information technology. These orbital currents will be engineered inexisting spin-orbitronic devices to amplify the torques and thus boost the devices’ performance (TRL3), and implemented in three devices solely based on orbitronics, without any heavy metal: an orbital torque memory outperforming SOT-MRAM (TRL3), targeting a critical current of 15 MA/cm2 and an energy consumption in the fJ range, an electrically controlled orbital switch for programmable logic and a vortex-beam controlled THz emitter (TRL2). We will demonstrate that orbital-based devices can outperform standard spin-based ones and open avenues to novel classes of scarce metal-free components.
Our program aims to spearhead the harnessing of novel physical effects involving the electron’s orbital angular momentum. We will:
We will perform asystematic characterization of orbital transport parameters (orbital conductivity and relaxation length, orbital-charge conversion rate, orbital polariz ability…) in a wide range of materials (light metals, oxide interfaces,2D materials...) to establish optimal materials. This extensive list, crucial to promote orbitronics across disciplines, will be available to the whole community via the project’s website and open access publications, and will serve as a benchmark to accelerate the development of orbitronics experiments and devices.
Beyond the research scope of orbitronics, OBELIX will contribute to the growing efforts to enhance the public level of understanding of the issues related to critical materials in the field of microelectronics and information technologies. We will develop:
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